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Heterostructures based on spin-gapless semiconductor CoFeMnSi are of significant interest for developing modern spintronic devices. The characteristics of such devices are determined by the structural and magnetic properties of the CoFeMnSi layer. The development of technology for manufacturing defect-free thin film layers of CoFeMnSi is currently relevant. In this work, the thin single-crystal CoFeMnSi films grown by pulsed laser deposition on the surface of the MgO(100) substrate are considered. The technological parameters for the production of CoFeMnSi films are optimized. It was shown that by selecting the optimal values of the MgO(100) substrate temperature, the target – substrate distance, the energy and frequency of pulsed laser radiation, CoFeMnSi films can be produced in island or layer-by-island growth modes. It has been established that for growing CoFeMnSi films in a layer-by-layer mode, it is necessary to introduce 2-minute pauses during the formation of each new film layer, the use of which has made it possible to grow atomically smooth single-crystal CoFeMnSi films up to 20 nm thick. Electron microscopic studies and diffraction analysis of cross-sectional samples of films grown on a substrate have demonstrated that they have a perfect cubic crystalline structure. The position of reflections in the diffraction pattern indicates that the cubic unit cells of the CoFeMnSi film (space group ) and of MgO(100) crystal are rotated relative to each other by an angle of 45° around the direction of MgO[001], while ensuring their alignment along the CoFeMnSi(202) and MgO(020) planes. The obtained results of the work can be used for the manufacture of multilayer heterostructures and devices based on them.

Key words: spin gapless semiconductor, spintronics, thin films, laser deposition, epitaxy, single-crystal, CoFeMnSi alloy
Published in: FUNDAMENTAL RESEARCHES
Bibliography link: Veryuzhskii I. V., Prikhodko A. S., Uskov F. A., Grigorashvili Yu. E., Borgardt N. I. Single-Crystalline CoFeMnSi Heusler alloy thin films as prepared by pulsed laser deposition on MgO substrate. Proc. Univ. Electronics, 2024, vol. 29, no. 6, pp. 703–714. https://doi.org/10.24151/1561-5405-2024-29-6-703-714. – EDN: GTIDDT.
Financial source: the work has been supported by the Ministry of Science and Higher Education of the Russian Federation (Contract FSMR-2024-0004) and by using equipment of the Research Sharing Center “Diagnostics and modification of microstructures and nanoobjects

Ivan V. Veriuzhskii
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Philip A. Uskov
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Yury E. Grigorashvili
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

Nikolay I. Borgardt
National Research University of Electronic Technology, Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)

1. Heusler alloys for spintronic devices: Review on recent development and future perspectives / K. Elphick, W. Frost, M. Samiepour et al. // Sci. Technol. Adv. Mater. 2021. Vol. 22. Iss. 1. P. 235–271. https://doi.org/10.1080/14686996.2020.1812364

2. Rani D., Bainsla L., Ablam A., Suresh K. G. Spin-gapless semiconductors: Fundamental and applied aspects // J. Appl. Phys. 2020. Vol. 128. Iss. 22. Art. No. 220902. https://doi.org/10.1063/5.0028918

3. Han J., Feng Y., Yao K., Gao G. Y. Spin transport properties based on spin gapless semiconductor CoFeMnSi // Appl. Phys. Lett. 2017. Vol. 111. Iss. 13. Art. No. 132402. https://doi.org/10.1063/1.4999288

4. Investigation of spin gapless semiconducting behavior in quaternary CoFeMnSi Heusler alloy thin films on Si(100) / V. Mishra, V. Barwal, L. Pandey et al. // J. Magn. Magn. Mater. 2022. Vol. 547. Art. ID: 168837. https://doi.org/10.1016/j.jmmm.2021.168837

5. Tan X., You J., Liu P.-F., Wang Y. Theoretical study of the electronic, magnetic, mechanical and thermodynamic properties of the spin gapless semiconductor CoFeMnSi // Crystals. 2019. Vol. 9. Iss. 12. Art. No. 678. https://doi.org/10.3390/cryst9120678

6. Magnetic tunnel junction with an equiatomic quaternary CoFeMnSi Heusler alloy electrode / L. Bainsla, K. Z. Suzuki, M. Tsujikawa et al. // Appl. Phys. Lett. 2018. Vol. 112. Iss. 5. Art. No. 052403. https://doi.org/10.1063/1.5002763

7. Фетисов Ю. К., Сигов А. С. Спинтроника: физические основы и устройства // РЭНСИТ. 2018. Т. 10. № 3. С. 343–356.

8. Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam / E. Jackson, M. Sun, T. Kubota et al. // Sci. Rep. 2018. Vol. 8. Art. No. 7585. https://doi.org/10.1038/s41598-018-25638-8

9. Investigation of perpendicular magnetic anisotropy in CoFeMnSi based heterostructures / L. Saravanan, V. Mishra, L. Pandey et al. // J. Magn. Magn. Mater. 2022. Vol. 561. Art. ID: 169693. https://doi.org/10.1016/j.jmmm.2022.169693

10. Structures, magnetism and transport properties of the potential spin-gapless semiconductor CoFeMnSi alloy / H. Fu, Y. Li, L. Ma et al. // J. Magn. Magn. Mater. 2019. Vol. 473. P. 16–20. https://doi.org/10.1016/j.jmmm.2018.10.040

11. Structural and magnetic properties of epitaxial thin films of the equiatomic quaternary CoFeMnSi Heusler alloy / L. Bainsla, R. Yilgin, J. Okabayashi et al. // Phys. Rev. B. 2017. Vol. 96. Iss. 9. Art. No. 094404. https://doi.org/10.1103/PhysRevB.96.094404

12. Kushwaha V. K., Rani J., Tulapurkar A., Tomy C. V. Possible spin gapless semiconductor type behavior in CoFeMnSi epitaxial thin films // Appl. Phys. Lett. 2017. Vol. 11. Iss. 15. Art. No. 152407. https://doi.org/10.1063/1.4996639

13. Greer J. A. History and current status of commercial pulsed laser deposition equipment // J. Phys. D: Appl. Phys. 2014. Vol. 47. No. 3. Art. No. 034005. https://doi.org/10.1088/0022-3727/47/3/034005

14. Giannuzzi L. A., Stevie F. A. A review of focused ion beam milling techniques for TEM specimen preparation // Micron. 1999. Vol. 30. Iss. 3. P. 197–204. https://doi.org/10.1016/S0968-4328(99)00005-0

15. Булаев С. А. Сущность импульсного лазерного напыления в вакууме как способа получения пленок нанометровой толщины // Вестник Казанского технологического университета. 2014. Т. 17. № 18. С. 25–28. EDN: SXYGFX.

16. Кузнецов И. А., Гараева М. Я., Мамичев Д. А., Занавескин М. Л. Формирование ультрагладких тонких пленок серебра методом импульсного лазерного осаждения // Кристаллография. 2013. Т. 58. № 5. С. 725–729. https://doi.org/10.7868/S0023476113030090. – EDN: QYNFFB.

17. Morintale E., Constantinescu C., Dinescu M. Thin films development by pulsed laser-assisted deposition // Physics AUC. 2010. Vol. 20 (1). P. 43–56.

18. Влияние процессов в факеле при лазерной абляции на удельное сопротивление и морфологию нанокристаллических пленок ZnO / О. А. Агеев, А. П. Достанко, Е. Г. Замбург и др. // Физика твердого тела. 2015. Т. 57. № 10. С. 2037–2042. EDN: UJMJFJ.

19. Venables J. A. Surface processes in thin film devices // Introduction to surface and thin film processes / J. A. Venables. Cambridge: Cambridge Univ. Press, 2000. P. 260–296. https://doi.org/10.1017/CBO9780511755651.009

20. Growth and in situ high-pressure reflection high energy electron diffraction monitoring of oxide thin films / J. Li, W. Peng, K. Chen et al. // Sci. China Phys. Mech. Astron. 2013. Vol. 56. P. 2312–2326. https://doi.org/10.1007/s11433-013-5352-6

21. Baskaran A., Smereka P. Mechanisms of Stranski-Krastanov growth // J. Appl. Phys. 2012. Vol. 111. Iss. 4. Art. No. 044321. https://doi.org/10.1063/1.3679068

22. Шугуров А. Р., Панин А. В. Механизмы возникновения напряжений в тонких пленках и покрытиях // ЖТФ. 2020. Т. 90. № 12. С. 1971–1994. https://doi.org/10.21883/jtf.2020.12.50417.38-20. – EDN: VBXWWO.

23. Braun A., Diale M., Malherbe J., Braun M. Introduction: Jan van der Merwe. Epitaxy and the computer age // J. Mater. Res. 2017. Vol. 32. P. 3921–3923. https://doi.org/10.1557/jmr.2017.426

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UDK: 620.3:548.5
Publication type: Scientific article
Source lang: Russian
DOI: 10.24151/1561-5405-2024-29-6-703-714
RISC id: GTIDDT

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